Alexandria Digital Research Library

Wide-Band Low Noise Quadrature VCO in CMOS SOI

Author:
Wang, Yipeng
Degree Grantor:
University of California, Santa Barbara.Electrical & Computer Engineering
Degree Supervisor:
Yue Patrick
Place of Publication:
[Santa Barbara, Calif.]
Publisher:
University of California, Santa Barbara
Creation Date:
2012
Issued Date:
2012
Topics:
Electrical engineering
Keywords:
VCO
Quadrature
SOI
Description:

This thesis presents a wide-band, low phase noise, low power Quadrature Voltage Controlled Oscillator (QVCO) designed in 0.18um CMOS Silicon on Insulator (SOI) technology. The 2.4 GHz ISM band QVCO achieves -124 dBc/Hz phase noise at 1MHz offset, 25% tuning range and 2.4mW power consumption under 1.1V supply. The SOI technology facilitates the design of high performance LC-VCO. High substrate resistance of SOI enables the fabrication of high Q on-chip inductor, which significantly improves VCO's phase noise performance. Moreover, an accumulation-mode (AMOS) varactor with reduced junction parasitic in SOI widens the VCO's tuning range. The Ring Injection Locked Frequency Divider (Ring-ILFD) demonstrates its wide locking range and low power consumption in high speed application. A combination of multiple injection and direct injection technique is used in this design to further enhance the locking range. The ILFD generates quadrature signal by halving the core VCO's output while strictly following its phase noise performance.

Format:
Text
Collection(s):
UCSB electronic theses and dissertations
ARK:
ark:/13030/m5p84cjk
Merritt ARK:
ark:/13030/m5p84cjk
Rights:
Inc.icon only.dark In Copyright
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